SiC Epitaxial Wafer

 

SiC epitaxial wafer are used in a variety of electronic components such as: Shockley Diodes, MOSFET, JFET, BJT, Thyristor, GTO and IGBT. Please refer to our 4"~6" SiC specifications or contact us directly.

4H-SiC Epi-Wafer Standard Specification (150mm & 100mm & 76.2mm)

Wafer orientation : Epitaxy is only available for off-axis substrates
Doping
  n-type p-type
Dopant Nitrogen Aluminum
Net Doping Density ND-NA NA-ND
Silicon Face 9E14~1E19cm-3 9E14~1E19cm-3
Tolerance ± 15% ± 50%
Uniformity ≦ 10% ≦ 20%
Thickness: 0.2~100µm
Tolerance ± 10%
Uniformity ≦ 5%

Characteristics Acceptable Limits Definitions Test Methods
Epi Defects 2mm*2mm
die yield ≥ 95%		 Defects only include triangular defects, downfalls, carrots and comets. candela CS920
Edge Chips ≦ 2 with radius 1.5mm Areas where material has been unintentionally peeled off from the wafer High Intensity illumination
Scratches ≦ 10 lines total and the total length of these lines should be less than wafer diameter Grooves or cuts below the surface plane of the wafer having a length-to-width ratio of greater than 5 to 1
Surface Roughness <0.5mm 20µm*20µm scanned by AFM
Backside Cleanliness 100% clean None contamination
Thickness see specification table Thickness is determined as an average value across the wafer by FTIR FTIR
Net doping see specification table Net doping  is determined as an average value across the wafer by MCV. MCV

 

SiC Epi-Wafer thickness Uniformity Distribution Chart

mean value(µm): 12.04
sigma/mean: 1.28%
(max-min)/(max+min): 3.04%

SiC Epi-Wafer Doping Unformity Distribution Chart

mean value(cm-3): 7.9515
sigma/mean: 3.48%
(max-min)/(max+min): 9.97%