GaN Substrates

 


2 inch GaN Template

Item GaN-T-C-U-C50 GaN-T-C-N-C50 GaN-T-C-P-C50
Dimensions Ф50.8 ± 0.1 mm Ф50.8 ± 0.1 mm Ф50.8 ± 0.1 mm
Thickness 4.5±0.5 µm, 20±2 µm 4.5±0.5 µm, 20±2 µm 4.5±0.5 µm
Orientation C-plane(0001) ± 0.5° C-plane(0001) ± 0.5° C-plane(0001) ± 0.5°
Conduction Type N-type(Undoped) N-type(Si-doped) P-type(Mg-doped)
Resistivity(300K) < 0.5Ω·cm < 0.05Ω·cm ~10Ω·cm
Carrier Concentration < 5x1017cm-3 >  1x1018cm-3 >  6x1016cm-3
Mobility ~ 300cm2/V•s ~ 200cm2/V•s ~ 10cm2/V•s
Dislocation Density Less than 5x108 cm-2(estimated by FWHMs of XRD) Less than 5x108 cm-2(estimated by FWHMs of XRD) Less than 5x108cm-2(estimated by FWHMs of XRD)
Substrate Structure GaN on sapphire (standard :SSP option:DSP) GaN on sapphire (standard :SSP option:DSP) GaN on sapphire (standard :SSP option:DSP)
Useable Surface Area >90% >90% >90%
Package Packaged in a class 100 clean room environment, in cassette of 25pcs  Packaged in a class 100 clean room environment, in cassette of 25pcs  Packaged in a class 100 clean room environment, in cassette of 25pcs 
or single container , under a nitrogen atmosphere. or single container , under a nitrogen atmosphere. or single container , under a nitrogen atmosphere.

 

2 inch Free-Standing GaN Substrate

2 inch
Item GaN-FS-C-U-C50 GaN-FS-C-N-C50 GaN-FS-C-SI-C50
Dimensions Ф 50.8  ± 1 mm Ф 50.8  ± 1 mm Ф 50.8  ± 1 mm
Thickness 350 ± 25 µm 350 ± 25 µm 350 ± 25 µm
Useable Surface Area >90% >90% >90%
Orientation C-plane (0001) off angle toward M-Axis 0.35°± 0.15° C-plane (0001) off angle toward M-Axis 0.35°± 0.15° C-plane (0001) off angle toward M-Axis 0.35°± 0.15°
Primary Orientation Flat (1-100)±0.5°,16.0±1.0mm (1-100)±0.5°,16.0±1.0mm (1-100)±0.5°,16.0±1.0mm
Secondary Orientation Flat (11-20)±3°,8.0±1.0mm (11-20)±3°,8.0±1.0mm (11-20)±3°,8.0±1.0mm
TTV ≤15µm ≤15µm ≤15µm
BOW ≤20µm ≤20µm ≤20µm
Conduction Type N-type N-type Semi-Insulating
Resistivity(300K) < 0.1Ω·cm < 0.05Ω·cm > 106 Ω·cm
Dislocation Density From 1x105 to 3x106 cm-2 From1x105 to3x106 cm-2 From1x105 to 3x106 cm-2
Polishing Front surface：Ra＜0.2 nm(polished); Front surface：Ra＜0.2 nm(polished); Front surface：Ra＜0.2 nm(polished);
or<0.3nm (polished and surface treatment for epitaxy) or<0.3nm (polished and surface treatment for epitaxy) or<0.3nm (polished and surface treatment for epitaxy)
Back Surface：0.5~1.5μm; Back Surface：0.5~1.5μm; Back Surface：0.5~1.5μm;
option：1-3nm (Fine ground); < 0.2nm(polished) option：1-3nm (Fine ground); < 0.2nm(polished) option：1-3nm (Fine ground); < 0.2nm(polished)
Package Packaged in a class 100 clean room environment, Packaged in a class 100 clean room environment, Packaged in a class 100 clean room environment,
 in single container,under a nitrogen atmosphere.  in single container,under a nitrogen atmosphere.  in single container,under a nitrogen atmosphere.



 10x10.5mm2 Free-Standing GaN Substrate

 

 

Item GaN-FS-C-U-S10 GaN-FS-C-N-S10 GaN-FS-C-SI-S10
Dimensions 10×10.5mm2 10×10.5mm2 10×10.5mm2
Thickness 350±25μm 350±25μm 350±25μm
Orientation C-plane（0001）off angle toward M-Axis 0.35°±0.15° C-plane（0001）off angle toward M-Axis 0.35°±0.15° C-plane（0001）off angle toward M-Axis 0.35°±0.15°
TTV ≤10µm ≤10µm ≤10µm
BOW ≤10µm ≤10µm ≤10µm
Conduction Type N-type N-type Semi-Insulating
Resistivity
(300K)		 < 0.1Ω·cm < 0.05Ω·cm > 106Ω·cm
Dislocation Density From 1x105 to 3x106cm-2 From 1x105 to 3x106cm-2 From 1x105to 3x106cm-2
Useable Surface Area >90% >90% >90%
Polishing Front Surface：Ra＜0.2 nm(polished); Front Surface：Ra＜0.2 nm(polished); Front Surface：Ra＜0.2 nm(polished);
or <0.3nm(polished and surface treatment for epitaxy) or <0.3nm(polished and surface treatment for epitaxy) or <0.3nm(polished and surface treatment for epitaxy)
Back Surface：0.5~1.5μm; Back Surface：0.5~1.5μm; Back Surface：0.5~1.5μm;
option：1-3nm(Fine ground);<0.2nm(polished) option：1-3nm(Fine ground);<0.2nm(polished) option：1-3nm(Fine ground)；<0.2nm(polished)
Package Packaged in a class 100 clean room environment, Packaged in a class 100 clean room environment, Packaged in a class 100 clean room environment, 
 in single container,under a nitrogen atmosphere.  in single container,under a nitrogen atmosphere. in single container,under a nitrogen atmosphere.



 Non-Polar and Semi-Polar Free-Standing GaN Substrate

 

Item GaN-FS-A-U/N/SI-S GaN-FS-M-U/N/SI-S GaN-FS-SP-U/N/SI-S
Dimensions （5.0~10.0）× 10.0 mm2 （5.0~10.0）× 10.0 mm2 （5.0~10.0）× 10.0 mm2
（5.0~10.0）× 20.0mm2 （5.0~10.0）× 20.0mm2 （5.0~10.0）× 20.0mm2
Thickness 350±25μm 350±25μm 350±25μm
Plane (11-20) (1-100) (20-21)
(20-2-1)
(11-22)
(10-11)
Miscut Angle -1°±0.2° -1°±0.2° -1°±0.2°
TTV ≤10µm ≤10µm ≤10µm
BOW ≤10µm ≤10µm ≤10µm
Conduction Type N-type  < 0.1Ω·cm N-type  < 0.1Ω·cm N-type  < 0.1Ω·cm
N-type < 0.05Ω·cm N-type < 0.05Ω·cm N-type < 0.05Ω·cm
Resistivity(300K) Semi-Insulating > 106Ω·cm Semi-Insulating > 106Ω·cm Semi-Insulating > 106Ω·cm
Dislocation Density From 1x105 to 3x106cm-2 From 1x105 to 3x106 cm-2 From 1x105 to 3x106 cm-2
Useable Surface Area >90% >90% >90%
Polishing Front Surface：Ra＜0.2 nm（polished）; Front Surface：Ra＜0.2 nm（polished） Front Surface：Ra＜0.2 nm（polished）
Back Surface：1-3nm（fine ground）; Back Surface：1-3nm(fine ground); Back Surface：1-3nm（fine ground）;
option：<0.2nm（polished） option：<0.2nm(polished). option：<0.2nm（polished）.
Package Packaged in a class 100 clean room environment, Packaged in a class 100 clean room environment,  Packaged in a class 100 clean room environment, 
 in single container,under a nitrogen atmosphere. in single container,under a nitrogen atmosphere. in single container,under a nitrogen atmosphere.



4 inch GaN Template


Item GaN-T-C-U-C100 GaN-T-C-N-C100
Dimensions Ф 100 ± 0.1 mm Ф 100 ± 0.1 mm
Thickness 4.5±0.5 µm, 20±2 µm 4.5±0.5 µm, 20±2 µm
Orientation C-plane(0001) ± 0.5° C-plane(0001) ± 0.5°
Conduction Type N-type(Undoped) N-type(Si-doped)
Resistivity(300K) < 0.5Ω·cm < 0.05Ω·cm
Carrier Concentration < 5x1017cm-3 >  1x1018cm-3
Mobility ~ 300cm2/V•s ~ 200cm2/V•s
Dislocation Density Less than 5x108 cm-2(estimated by FWHMs of XRD) Less than 5x108 cm-2(estimated by FWHMs of XRD)
Substrate Structure GaN on sapphire (standard :SSP option:DSP) GaN on sapphire (standard :SSP option:DSP)
Useable Surface Area >90% >90%
Package Packaged in a class 100 clean room environment, in cassette of 25pcs  Packaged in a class 100 clean room environment, in cassette of 25pcs 
or single container , under a nitrogen atmosphere. or single container , under a nitrogen atmosphere.

 

 

2 inch AlN Template


Item AlN-T-C-C50
Dimensions Ф 50.8 ± 0.1 mm
Thickness 4±1.5µm
Orientation C-plane (0001)
Conduction Type Semi-Insulating
Crystalline Quality XRD FWHM of (0002) < 350 arcsec  
XRD FWHM of (1012) < 450 arcsec
Surface Roughness Ra < 5 nm (10 x 10 µm2)
Substrate Structure AlN on sapphire (SSP)
Useable Surface Area Exclusion zone< 2 mm
Package Packaged in a class 100 clean room environment, in cassette of 25pcs 
or single container , under a nitrogen atmosphere.