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Due to the specification of high temperature and stable, Single Silicon Carbide are usually used for semiconductor field. Nowadays, High-Temperature Chemical Vapor Deposition(HTCVD) and Physical Vapor Transport(PVT) are common in the SiC crystal growing method. These two method are available for mass production.
SiCube is used with HTCVD and PVT method for mass production.
| Technical Data |
| 1. Diameter：4 inch |
| 2. Pressure : 5 - 900 mbar |
| 3. Temperature : 2600 °C |
| 4. Electric Power : 80kw |
| 5. Electric Frequency : 6~8 kHz |
| 6. Size : 2000 x 2500 x 3725 mm |
| 7. Weight(total) : 3800kg |
baSiC-T is used to mass production for 4-6 inch diameter crystal with HTCVD method.
| Technical Data |
| 1. Diameter：4 ~6 inch |
| 2. Pressure : 1 - 900 mbar |
| 3. Temperature : 2600 °C |
| 4. Electric Power : 60 kw |
| 5. Electric Frequency : 6~12 kHz |
| 6. Size : 2000 x1200 x 2800 mm |
| 7. Weight(total) : Approx. 2000kg |
＊If you need more detailed information, please go to Catalog(in Madarin)
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